IGBT｜OS Electronics

Structure: Input MOSFET,  Output Bipolar

Feature: High withstand voltage,  Low ON resistance,

                Switching transistor ideal for large currents

Advantage: Higher spped, smaller size, lower cost

Usage: Power (motor) control Automotive,

            industrial equipment, consumer equipment

            (white goods)

1. FS4 650V line-up has very small Vce(sat).Vce(sat)=1.15V -  1.45V(typ)

>>FGHL40T65LQDT,FGHL50T65LQDTL4,etc---------

2. ISO-TP247 uses TO-247 package. The package is isolated from chip and pins.

    ISO-TP247 needs only thin TIM between exposed pad and heatsink. 

    Package can be soldered on a heatsink directly which keeps heat resistance lower.

>>AFGE200T75RQD,AFGE200T75RQDL4,etc--------

3. Hybrid IGBT has SiC SBD inside which can reduce the reverse recovery loss in SBD.  

    Reverse Recovery Time trr=30ns(typ)

Comparison of FS4 and low Vce(sat) IGBT w/ competitors 

Vce(sat) is almost the same under IC = 80A

but Vce(sat) is smaller over 80A. 

Requires over 500um Iso-foil sheet to isolate

the package and heatsink with conventional TP247.  

No problem using thin foil sheets with

isolation between the chip and the package inside  

ISO-TP247 which makes Rthj-s smaller.

Improved heat dissipation