SiC MOSFET|OS Electronics



Product features

Silicon Carbide (SiC)

Silicon Carbide (SiC) is a semiconducting material


composed of silicon (Si) and carbon (C) which has


the following features in comparison with


standard silicon:



*10 x higher dielectric breakdown field strength
*3 x higher bandgap

SiC realizes high withstand voltage,


high heat resistance, small size, and high speed.



onsemi controls the supply chain of SiC device;


from SiC crystals, devices, packaging to


solution support.


onsemi is ready to support your power design for 


SiC diodes, SiC MOSFETs, and SiC modules


with wide bandgaps.


By Technology

Silicon Carbide (SiC) Diodes




onsemi SiC Diodes adopts a completely


new technology which enables


superior switching performance and


higher reliability.

Silicon Carbide (SiC) MOSFETs




onsemi SiC MOSFETs are designed


to be fast and rugged. 


System benefits include high efficiency


to reduced system size and cost.


SiC MOSFET Applications


Features of Family Devices

-M1 Family



 Voltage:1200V 1700V


Large die size >> low RTH.


Balance between switching loss and conduction loss is optimum.


Application: Motor Driver, Hard SW Applications



-M2 Family



Voltage today:650V,750V,1200V


Optimized for the lowest RDS(ON) for low speed applications.


Application: Motor Driver



-M3 Family



Optimized for fast switching applications. SW loss is the smallest.


Application: Hard SW Applications, LLC resonant



Feature 1 Rds (on) vs. Vgs: M1 M2 M3

Rdson should be as small as possible


with VGS as small as possible


as gate loss is in proportion to the value of Vgs.


onsemi’s SiC MOSFET is the second smallest. 


Feature 2 Switching Loss: M3

onsemi is getting the golden mean for


switching losses at turn-on.


Feature 3 Rds (on) vs. Temperature: M1 M2 M3

Rds(on) increases in proportion to Tj.


It is desirable to keep variation


as small as possible.


The variation in onsemi MOSFETs


are the second smallest.



Product List