SiC MOSFET｜OS Electronics
|Silicon Carbide (SiC)|
Silicon Carbide (SiC) is a semiconducting material
composed of silicon (Si) and carbon (C) which has
the following features in comparison with
*10 x higher dielectric breakdown field strength
*3 x higher bandgap
SiC realizes high withstand voltage,
high heat resistance, small size, and high speed.
onsemi controls the supply chain of SiC device;
from SiC crystals, devices, packaging to
onsemi is ready to support your power design for
SiC diodes, SiC MOSFETs, and SiC modules
with wide bandgaps.
Silicon Carbide (SiC) Diodes
onsemi SiC Diodes adopts a completely
new technology which enables
superior switching performance and
Silicon Carbide (SiC) MOSFETs
onsemi SiC MOSFETs are designed
to be fast and rugged.
System benefits include high efficiency
to reduced system size and cost.
|SiC MOSFET Applications|
|Features of Family Devices|
Large die size >> low RTH.
Balance between switching loss and conduction loss is optimum.
Application: Motor Driver, Hard SW Applications
Optimized for the lowest RDS(ON) for low speed applications.
Application: Motor Driver
Optimized for fast switching applications. SW loss is the smallest.
Application: Hard SW Applications, LLC resonant
|Feature 1 Rds (on) vs. Vgs: M1 M2 M3|
Rdson should be as small as possible
with VGS as small as possible
as gate loss is in proportion to the value of Vgs.
onsemi’s SiC MOSFET is the second smallest.
|Feature 2 Switching Loss: M3|
onsemi is getting the golden mean for
switching losses at turn-on.
|Feature 3 Rds (on) vs. Temperature: M1 M2 M3|
Rds(on) increases in proportion to Tj.
It is desirable to keep variation
as small as possible.
The variation in onsemi MOSFETs
are the second smallest.